JOURNALS

62) Sang Min Jung, Chul Jin Park, Hongsik Jeong and Moo Whan Shin, “Effect of number of laser pulses on p+/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing”, Materials Science in Semiconductor Processing, 60,(2017).

61)  Jun Seop An, Chul Min Choi, Yun Heub Song , Satoshi Shindo , Yuji Sutou  and Hongsik Jeong, “Investigation of an erasing method for synaptic behavior in a phase change device using Ge1Cu2Te3 (GCT)”, Electronics Letters 52(18), (2016).

60) Yongwoo Kwon, Byoungnam Park, Heesun Yang, Jin-Ha Hwang, Dae Hwan Kang, Hongsik Jeong and Yunheub Song, “Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells Microelectronics Reliability 63, (2016).

59) Park, Dambi; Park, Sungjin; Jeong, Kwang-Sik; Jeong, Hong-Sik; Song, Jae Yong; and Cho, Mann-Ho, “Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process”, Sci. Rep. 6, 19132 (2016).

58) Hyejin Choi, Tae Hyeon Kim, Jimin Chae, Juheyuck Baeck, Chul-Sik Kee, Kwang-Ho Jeong, Hong-Sik Jeong, Chul Kang* and Mann-Ho Cho*, “Evolution of the surface state in Bi2Se2Te thin films during phase transition”, Nanoscale, 7, 14924-14936 (2015).

57) Seung Jong Park, Hanjin Park, Moon Hyung Jang, Min Ahn, Won Jun Yang, Jeong Hwa Han, Hong-Sik Jeong, Cheol-Woon Kim, Young-Kyun Kwon* and Mann-Ho Cho*, “Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge–Te bonding in the crystallization mechanism”, J. Mater. Chem. C, 3, 9393-9402 (2015).

56) Sungjin Park, Dambi Park, Kwangsik Jeong, Taeok Kim, SeungJong Park, Min Ahn, Won Jun Yang, Jeong Hwa Han, Hong Sik Jeong, Seong Gi Jeon, Jae Yong Song, and Mann-Ho Cho*, “Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires”, ACS Appl. Mater. Interfaces,7 (39), pp 21819–21827 (2015).

55) Moon Hyung Jang, Seung Jong Park, Min Ahn, Kwang Sik Jeong, Sung Jin Park, Mann-Ho Cho, Jae Yong Song and Hongsik Jeong, “Ultrafast phase change and long durability of BN-incorporated GeSbTe”, J. Mater. Chem. C, 3, 1707-1715 (2015).

54) Eulyong Chaea, Kyumin Lee, Hwan Lee, Daehong Ko, Hongsik Jeong, Hyunchul Sohn, “Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition”, Thin Solid Films, Vol. 591, Part A, 137–142 (2015).

53) Dae-Hwan Kang, Hyun-Goo Jun, Kyung-Chang Ryoo, Hongsik Jeong* and Hyunchul Sohn, “Emulation of spike-timing dependent plasticity in nano-scale phase change memory”, J. of Neurocomputing, 155, p153, (2015).

52) Dae-Hwan Kang, Nan Young Kim, Hongsik Jeong, and Byung-ki Cheong  “ Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change ”,  Appl. Phys. Lett. 100, 063508 (2012).

51) Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong and Byung-Gook Park, “Interface-modified unipolar resistive random access memory (RRAM) structure for low-power application”J Nanosci Nanotechnol 12(7):5263-9 (2012).

50) Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park “ Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics” Japanese Journal of Applied Physics 51 (2012).

49) Kyung-Chang Ryoo, Sungjun Kim, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, Byung-Gook Park, “Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability”, Japanese Journal of Applied Physics 06  51 (2012).

48) Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park  “Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure” Japanese Journal of Applied Physics 51 (2012).

47) Kong-Soo Lee, Jae-Jong Han, Hanjin Lim, Seokwoo Nam, Chilhee Chung, Hong-Sik Jeong, Hyunho Park, Hanwook Jeong, Byoungdeog Choi, “Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices”  Electron Device Letters, 33, pp 242 – 244, (2012).

46) Konstantin B. Borisenko, Yixin Chen, David J.H. Cockayne,  Se Ahn Song, and Hong Sik Jeong, “Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials”,  Acta Materialia, Volume 59, Issue 11, , pp 4335-4342, (2011).

45) Kyung-Chang Ryoo,, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park, “ Novel U-Shape Resistive Random Access Memory Structurefor Improving Resistive Switching Characteristics”,  Japanese Journal of Applied Physics 50, 04DD15, (2011).

44) Y.M. Lee, H.J. Shin, S.J. Choi, J.H. Oh, H.S. Jeong,  K. Kim, and M.-C. Jung, “Nitrogen contribution to N-doped GeTe (N: 8.4 at.%) in the structural phase transition”, Current Applied Physics, Volume 11, pp 710-713, (2011).

43) Kong-Soo Lee, Dae-Han Yoo, Young-Sub Yoo, Jae-Jong Han, Seok-Sik Kim, Hong-Sik Jeong, Chang-Jin Kang, and Joo-Tae Moon , Hanwook Jeong, Kwang-Ryul Kim, and Byoungdeog Choi, “ Selective Epitaxial Growth of Silicon Layer Using Batch-Type Equipment for Vertical Diode Application to Next Generation Memories”, ECS Transactions, 28 (1) 281-286 (2010).

42) Y. M. Lee, M.-C. Jung, H. J. Shin, K. Kim, S. A. Song, H. S. Jeong, C. Ko and M. Han,  “Temperature-dependent high-resolution X-ray photoelectron spectroscopic study on Ge1Sb2Te4”, Thin Solid Films , vol. 518, no. 20, pp. 5670-5672, (2010).

41) Ju Heyuck Baeck, Young-kun Ann, Kwang-Ho Jeong, Mann-Ho Cho, Dae-Hong Ko, Jae-Hee Oh and Hongsik Jeong , “ Electronic Structure of Te/Sb/Ge and Sb/Te/Ge Multi Layer Films Using Photoelectron Spectroscopy” JACS, pp 13634–13638, (2009).

40) Jai-Hyun Kim, Dong Jin Jung, Hyun-Ho Kim, Young Ki Hong, Eun Sun Lee, Song Yi Kim,, Ju Young Jung, Han Kyoung Ko, Do Yeon Choi, SeungKuk Kang, Heesan Kim,Won Woong Jung, Jin Young Kang, Young Min Kang, Sungyung Lee, and Hongsik Jeong “Hydrogen and Stress-Induced De-lamination in an IrO2 Layer of Ferroelectric Random Access Memories”, Japanese Journal of Applied Physics 48, 04C066, (2009).

39) W. Zhang, H. S. Jeong and S. A. Song “Martensitic Transformation in Ge2Sb2Te5 Alloy”, Advanced Engineering Materials , Volume 10, pp 67–72, (2008).

38)  C. Ko, Y.M. Lee, H.J. Shin, M.-C. Jung, M. Han, K. Kim, J.C. Park, S.A. Song and H.S. Jeong, Euro. Phys. J. B 66, 171 (2008).

37) Se Ahn Song, Wei Zhang, Hong Sik Jeong, Jin-Gyu Kim, Youn-Joong Kim, “ In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides”, Ultramicroscopy, Volume 108, pp 1408-1419, (2008).

36) Jung Min-Cherl, Kim, Ki-Hong, Lee, Young-Mi,  Eom, Jae-Hyeon,  Im, Jino,  Yoon, Young-Gui, Ihm, Jisoon, Song Se Ahn, Jeong, Hong-Sik and Shin, Hyun-Joon “ Chemical state and atomic structure of Ge2Sb2Te5 system for nonvolatile phase-change random acess memory ”, Journal of Applied Physics, Volume 104, Issue 7, pp. 074911-074911-6 (2008).

35) C.W. Jeong, D.H. Kang, D.W. Ha, Y.J. Song, J.H. Oh, J.H. Kong, J.H. Yoo, J.H. Park, K.C. Ryoo, D.W. Lim, S.S. Park, J.I. Kim, Y.T. Oh, J.S. Kim, J.M. Shin, Jaehyun Park, Y. Fai, G.H. Koh, G.T. and  Jeong, H.S. Jeong, “Writing current reduction and total set resistance analysis in PRAM”, J of  Solid-State Electronics, Volume 52, Pages 591-595 (2008).

34) M.-C. Jung, Y.M. Lee, H.-D. Kim, M.G. Kim, H.J. Shin, K.H. Kim, S.A. Song, H.S. Jeong, C.K. Ko, M. Han,  Appl. Phys. Lett. 91  083514 (2007).

33) Wei Zhang, Se Ahn Song, Hong Sik Jeong, Jin Gyu Kim, Youn Joong Kim “ Dislocations in Phase-Change Ge2Sb2Te5 Alloy” Advanced Materials Research, Volume 26-28,  pp 1097-1100, (2007).

32) Kang, S.; Cho, W. Y.; Cho, B.-H.; Lee, K.-J.; Lee, C.-S.; Oh, H.-R.; Choi, B.-G.; Wang, Q.; Kim, H.-J.; Park, M.-H.; Ro, Y. H.; Kim, S.; Ha, C.-D.; Kim, K.-S.; Kim, Y.-R.; Kim, D.-E.; Kwak, C.-K.; Byun, H.-G.; Jeong, G.; Jeong, H.; Kim, K.; Shin, Y.; “ A 0.1um 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation”,  IEEE Journal of  Solid-State Circuits, Vol 42, pp 210–218, (2007).

31) Sang Yub Ie, Byung Tack Bea, Young-kun Ahn, M. Y. Chang, D. G. You, M. H. Cho, K. Jeong, Jae-Hee Oh, Gwan-Hyeob Koh, and Hongsik Jeong , “ Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements”,  Appl. Phys. Lett. 90, 251917 (2007).

30) Kyung-Chang Ryoo, Yoon Jong Song, Jae-Min Shin, Sang-Su Park, Dong-Won Lim, Jae-Hyun Kim, Woon-Ik Park, Ku-Ri Sim, Ji-Hyun Jeong, Dae-Hwan Kang, Jun-Hyuck Kong, Chang-Wook Jeong, Jae-Hee Oh, Jae-Hyun Park, Jeong-In Kim, Yong-Tae Oh, Ji-Sun Kim, Seong-Ho Eun, Kwang-Woo Lee, Seong-Pil Koh, Yung Fai, Gwan-Hyob Koh, Gi-Tae Jeong, Hong-Sik Jeong, and Kinam Kim “ Ring Contact Electrode Process for High Density Phase Change Random Access Memory”,  Japanese Journal of Applied Physics Vol. 46,  pp. 2001-2005, (2007).

29) Ju-Young Jung, Heung-Jin Joo, Jung-Hoon Park, Seung-Kuk Kang, Hwi-San Kim, Do-Yeon Choi, Jai-Hyun Kim, Eun-Sun Lee, Young-Ki Hong, Hyun-Ho Kim, Dong-Jin Jung, Young-Min Kang, Sung-Yung Lee, Hong-Sik Jeong, and Kinam Kim “Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory”,  Japanese Journal of Applied Physics, Vol. 46,  pp.1934-1937, (2007).

28) Jong-Bong Park, Gyeong-Su Park, Baik, H.-S. Jeong, “ Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory”,  Journal of the Electrochemical Society Volume: 154, pp139-141, (2007).

27) YoungKuk Kim, K. Jeong, M.-H. Cho, Uk Hwang, H. S. Jeong, and Kinam Kim  “Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition”  Appl. Phys. Lett. 90, 171920 (2007).

26) W. C. Jeong, J. H. Park, J. H. Oh, G. H. Koh, G. T. Jeong, H. S. Jeong, and  Kinam Kim  “ Field assisted spin switching in magnetic random access memory”, J. Appl. Phys. 99, 08H708 (2006).

25) Chang-Wook Jeong, Su-Jin Ahn, Young-Nam Hwang, Yoon-Jong Song, Jae-Hee Oh, Su-Youn Lee, Se-Ho Lee, Kyung-Chang Ryoo, Jong-Hyun Park, Jae-Hyun Park, Jae-Min Shin, Fai Yeung, Won-Cheol Jeong, Jeong-In Kim, Gwan-Hyeob Koh, Gi-Tae Jeong, Hong-Sik Jeong and Kinam Kim  Highly Reliable Ring-Type Contact for High-Density Phase Change Memory,  Japanese Journal of Applied Physics Vol. 45, pp. 3233-3237, (2006).

24) Hyung-rok Oh; Beak-hyung Cho; Woo Yeong Cho; Sangbeom Kang; Byung-gil Choi; Hye-jin Kim; Ki-sung Kim; Du-eung Kim; Choong-keun Kwak; Hyun-geun Byun; Gi-tae Jeong; Hong-sik Jeong; and Kinam Kim; “ Enhanced write performance of a 64-mb phase-change random access memory”, IEEE Journal of Solid-State Circuits, Vol 41, pp 122 – 126, (2006).

23) W. C. Jeong, J. H. Park, G. H. Koh, G. T. Jeong, H. S. Jeong, and Kinam Kim “ Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer “,  J. Appl. Phys. 97, 10C905, (2005).

22) Woo Yeong Cho; Beak-Hyung Cho; Byung-Gil Choi; Hyung-Rok Oh; Sangbeom Kang; Ki-Sung Kim; Kyung-Hee Kim; Du-Eung Kim; Choong-Keun Kwak; Hyun-Geun Byun; Youngnam Hwang; Ahn, S.; Gwan-Hyeob Koh; Gitae Jeong; Hongsik Jeong; Kinam Kim, “ A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)”, , IEEE Journal of  Solid-State Circuits, Volume 40,  pp.293–300, (2005).

21) Yun Ki Lee; Byong Sun Chun; Young Keun Kim; Injun Hwang; Wanjun Park; Taewan Kim; Won-Cheol Jeong; Lee, J.; Hong Sik Jeong; “Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer”, IEEE Transactions on Magnetics, Volume 41, pp 2688-2690, (2005).

20) Fai Yeung, Su-Jin Ahn, Young-Nam Hwang, Chang-Wook Jeong, Yoon-Jong Song, Su-Youn Lee, Se-Ho Lee, Kyung-Chang Ryoo, Jae-Hyun Park, Jae-Min Shin, Won-Cheol Jeong, Young-Tae Kim, Gwan-Hyeob Koh, Gi-Tae Jeong, Hong-Sik Jeong and Kinam Kim “ Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory”, Japanese Journal of Applied Physics Vol. 44, No. 4B, pp. 2691-269, (2005).

19) Young-Tae Kim, Young-Nam Hwang, Keun-Ho Lee, Se-Ho Lee, Chang-Wook Jeong, Su-Jin Ahn, Fai Yeung, Gwan-Hyeob Koh, Heong-Sik Jeong, Won-Young Chung, Tai-Kyung Kim, Young-Kwan Park, Ki-Nam Kim and Jeong-Taek Kong, “ Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations ”, Japanese Journal of Applied Physics Vol. 44, No. 4B, pp. 2701-2705, (2005).

18) Seung-Kuk Kang, Hyoung-Seub Rhie, Hyun-Ho Kim, Bon-Jae Koo, Heung-Jin Joo, Jung-Hun Park, Young-Min Kang, Do-Hyun Choi, Sung-Young Lee, Hong-Sik Jeong and Kinam Kim “Robust Three-Metallization Back End of Line Process for 0.18 µm Embedded Ferroelectric Random Access Memory”, Japanese Journal of Applied Physics Vol. 44, No. 4B,  pp. 2706-2709, (2005).

17) Jeong, W.C.; Kim, H.J.; Park, J.H.; Jeong, C.W.; Lee, E.Y.; Oh, J.H.; Jeong, G.T.; Koh, G.H.; Koo, H.C.; Lee, S.H.; Lee, S.Y.; Shin, J.M.; Jeong, H.S.; Kinam Kim “ A new reference signal generation method for MRAM using a 90-degree rotated MTJ”, IEEE Transactions on Magnetics, Volume 40, pp2628 – 2630, (2004).

16) Kang-Woon Lee, Byung-Gil Jeon, Byung-Jun Min, Seung-Gyu Oh, Han-Ju Lee,Woo-Taek Lim, Sung-Hee Cho, Hongsik Jeong, Chilhee Chung and Kinam Kim, “ Development of Embedded Non-Volatile FRAMs for High Performance Smart Cards ”,  J. of  semicon. tech and sci. vol .4, (2004)

15) H.J. Kim, K.H. Koh, G.T. Jeong, W.C. Jeong, J.H. Park, S.Y. Lee, J.H. Oh, I.H. Song, H.S. Jeong and Kinam Kim, “A process integration of  high performance 64kb MRAM”  IEEE Transac. on magnetics, vol. 39(5),p2851, (2003).

14)  J.G.Lee, C.H.Cho, J.Y.Lee, M.S.Kim,J.K.Lee, S.H.Shin, D.H. Kwak, G.H. Koh, ,  G.T. Jeong, H.S.Jeong, T.Y.Chung and Kinam Kim, “Novel Cell Architecture for High Performance of 512Mb DRAM with 0.12um Design Rule” J. of  Kor. Phys. Soc. (2002).

13) B.J. Park, Y.N. Hwang, Y.G.Park, Y.S. Hwang, J.H. Oh, D.H.  Kwak,  H.S.Jeong, Y.J. Park, Kinam Kim “Highly Scalable W Bit Line Technology for Self Aligned Storage Node Contact”, J. of  Kor. Phys. Soc. (2002).

12) Yoonsoo Chun, J.S.Park, S.M.Jang, S.G.Park, Y.S.Hwang, H.S. Jeong, and Kinam Kim., “A Novel Metal Contact process using Borderless Contact stud with self-stopping layer for 4Gb DRAM and beyond ”, J of  Kor. Phys. Soc. (2001).

11) J.G.Lee, C.H.Cho, J.Y.Lee, M.S.Kim,J.K.Lee, S.H.Shin, K.W.Kwak, G.H. Koh, G.T. Jeong, H.S.Jeong, T.Y.Chung and Kinam Kim “New Integration Technology of Cell Landing Pad for 0.13㎛ DRAM generation and beyond”, J of  Kor. Phys. Soc. (2001).

10) Daewon Ha, Dongwon Shin, Gwan-Hyeob Koh,  “A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 μ m technology node and beyond”, IEEE Transactions on Electron Devices Volume: 47, pp 1499-506, (2000).

09) D.H.  Kwak, G.T. Jeong, C.Y. Yoo, B.S. Joo, M.H. Lee, Y.S.Chun, B.J. Park, J.H.Oh, H.S.Jeong, “New Integration Technology of BST MIM Capacitor with Pt Spacer for Application to 0.15um   DRAM and Beyond ” . JKPS [ Supplementary Issue ] Vol. 35, Supp. 4,  pp. S810, (1999).

08) Hongil Yoon, Kiwon Cha, Changsik Yoo, Nam Jong Kim, Keum Yong Kim, Changho Lee, Kyu Nam Lim, Kuchan Lee, Jun Young Jun, Tae Sung Jung,  Hongsik Jeong, Tae Young Chung, Kinam Kim, Su In Cho, “A 2.5V 333Mbps/pin 1Gbit Double Data Rate Synchronous DRAM” IEEE Journal of Solid-State Circuits, (1999).

07) Young-Nam Hwang, Sanghun Shin, Hong Lee Park, Seung-Han Park, Ung Kim, Hong Sik Jeong,  Eun-joo Shin and Dongho Kim., “Effect of lattice contraction on the Raman shifts of CdSe quantum dots in glass matrices”, Phys. Rev. B 54, 15120, (1996).

06) Kyu-Haeng Lee, Do-Hyun Park, Sung-Hyun Baek, Sanghun Shin, Young-Nam Hwang, Seung-Han Park, Ung Kim, Hongsik Jung and Dongho Kim, “Intensity-Dependent Decay Times of Excited Electrons in Semiconductor-Doped Glasses”,  JKPS Vol. 28, No.3, pp. 391,(1995).

05) Gi-Jung Nam, Hyo-Soon Eom, Heon-Soo Kim, Hong-Sik Jeong, Ung Kim and Dong-Seob Ko, “Viscosity and Temperature Dependence of the Orientational Relaxation Times of Rhodamine 6G  Molecules in Solvents”,  JKPS  Vol. 25,  No. 6,  pp. 550, (1992).

04) Hyo Soon Eom, Hyun Soo Kim, Hong Sik Jeong, Gijung Nam, Kyu Gwon Choi, Ung Kim, Dong Seob Ko. and Iel Gon Kim, “A Study of Energy Transfer Processes for Laser Dye Molecules in Solution Using a Time-Correlated Single Photon Counting System”, JKPS Vol. 25, No. 3,  pp. 218, (1992).

03) Hongsik Jeong et. al., “Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells”, Solid State Communications, Volume 85, (1993).

02) Hyun Soo Kim, Hong Sik Jeong, Hyo Soon Eom, Gyu Kwan Choi, Ung Kim and Dong Seob Ko, “Energy Transfer of Rhodamine 6G Molecules in Aqueous Solution: Time-Correlated Single Photon Counting Method”, JKPS  Vol. 24, No. 4, pp. 302, (1991).

01) Kim, I.G.; Jung, H.S.; Ko, D.S.; Kim, U. “A synchronously mode locked CW dye laser pumped by an Ar ion laser”, Journal of the Korean Physical Society Vol.22, p.97, (1989).

PROCEEDINGS

57) High density PCM(phase change memory) technology International SoC Design Conference (ISOCC), (2016).

56) Dae-Hwan Kang, Hyun-Goo Jun, Kyung-Chang Ryoo, Jae Hee Oh, and Hongsik Jeong “Emulation of spike-timing dependent plasticity in phasechange memory cells for neuromorphic applications”, EPCOS (2013).

55) Dae-Hwan Kang, Nan Young Kim, Yongwoo Kwon, Hongsik Jeong, and Byungi Cheong,“Understanding on Current-induced Crystallization Process and Faster Set Write Operation Thereof in Non-Volatile Phase Change Memory”, EPCOS (2011).

54) Kang, D-H.; Lee, J.-H.; Kong, J.H.; Ha, D.; Yu, J.; Um, C.Y.; Park, J.H.; Yeung, F.; Kim, J.H.; Park, W.I.; Jeon, Y.J.; Lee, M.K.; Song, Y.J.; Oh, J.H.; Jeong, G.T.; Jeong, H.S., “ Two-bit cell operation in diode-switch phase change memory cells with 90nm technology”, VLSI Technology (2008).

53) Jung, D.J.; Ahn, W.S.; Hong, Y.K.; Kim, H.H.; Kang, Y.M.; Kang, J.Y.; Lee, E.S.; Ko, H.K.; Kim, S.Y.; Jung, W.W.; Kim, J.H.; Kang, S.K.; Jung, J.Y.; Kim, H.S.; Choi, D.Y.; Lee, S.Y.; Wei, K.H.A.; Wei, C.; Jeong, H.S.; “An endurance-free ferroelectric random access memory as a non-volatile RAM”, VLSI Technology (2008).

52) Hyung-rok On; Beak-hyung Cho; Woo Yeong Cho; Sangbeom Kang; Byung-gil Choi; Hye-jin Kim; Ki-sung Kim; Du-eung Kim; Choong-keun Kwak; Hyun-geun Byun; Gi-tae Jeong; Hong-sik Jeong; Kinam Kim; “Enhanced write performance of a 64 Mb phase-change random access memory”, Digest of Technical Papers. ISSCC (2005).

51) Kinam Kim; Gitae Jeong; Hongsik Jeong; Sungyung Lee; “ Emerging memory technologies”, Custom Integrated Circuits Conference (2005).

50) Lee, Kwang-Jin; Cho, Beak-Hyung; Cho, Woo-Yeong; Kang, Sangbeom; Choi, Byung-Gil; Oh, Hyung-Rok; Lee, Chang-Soo; Kim, Hye-Jin; Park, Joon-Min; Wang, Qi; Park, Mu-Hui; Ro, Yu-Hwan; Choi, Joon-Yong; Kim, Ki-Sung; Kim, Young-Ran; Shin, In-Cheol; Lim, Ki-Won; Cho, Ho-Keun; Choi, Chang-Han; Chung, Won-Ryul; Kim, Du-Eung; Yu, Kwang-Suk; Jeong, Gi-Tae; Jeong, Hong-Sik; Kwak, Choong-Keun; Kim, Chang-Hyun; Kim, Kinam; “A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput”, ISSCC (2007).

49) Koh, G.H.; Hwang, Y.N.; Lee, S.H.; Lee, S.Y.; Ryoo, K.C.; Park, J.H.; Song, Y.J.; Ahn, S.J.; Jeong, C.W.; Yeung, F.; Kim, Y.-T.; Park, J.-B.; Jeong, G.T.; Jeong, H.S.; Kim, K.; “PRAM process technology Integrated Circuit Design and Technology”, ICICDT (2004).

48) Lee, S.H.; Hwang, Y.N.; Lee, S.Y.; Ryoo, K.C.; Ahn, S.J.; Koo, H.C.; Jeong, C.W.; Kim, Y.-T.; Koh, G.H.; Jeong, G.T.; Jeong, H.S.; Kinam Kim; Full integration and cell characteristics for 64Mb nonvolatile PRAM VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on 15-17 June 2004 Page(s):20 – 21

47) Ahn, S.J.; Song, Y.J.; Jeong, C.W.; Shin, J.M.; Fai, Y.; Hwang, Y.N.; Lee, S.H.; Ryoo, K.C.; Lee, S.Y.; Park, J.H.; Horii, H.; Ha, Y.H.; Yi, J.H.; Kuh, B.J.; Koh, G.H.; Jeong, G.T.; Jeong, H.S.; Kinam Kim; Ryu, B.I.; Highly manufacturable high density phase change memory of 64Mb and beyond  Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International 13-15 Dec. 2004 Page(s):907 – 910

46)Ahn, S.J.; Hwang, Y.N.; Song, Y.J.; Lee, S.H.; Lee, S.Y.; Park, J.H.; Jeong, C.W.; Ryoo, K.C.; Shin, J.M.; Fai, Y.; Oh, J.H.; Koh, G.H.; Jeong, G.T.; Joo, S.H.; Choi, S.H.; Son, Y.H.; Shin, J.C.; Kim, Y.T.; Jeong, H.S.; Kinam Kim; Highly reliable 50nm contact cell technology for 256Mb PRAM  VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on 14-16 June 2005 Page(s):98 – 99

45) Jeong, G.T.; Hwang, Y.N.; Lee, S.H.; Lee, S.Y.; Ryoo, K.C.; Park, J.H.; Song, Y.J.; Ahn, S.J.; Jeong, C.W.; Kim, Y.-T.; Horii, H.; Ha, Y.H.; Koh, G.H.; Jeong, H.S.; Kinam Kim; Process technologies for the integration of high density phase change RAM  Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
9-11 May 2005 Page(s):19 – 22

44) Song, Y.J.; Ryoo, K.C.; Hwang, Y.N.; Jeong, C.W.; Park, S.S.; Kim, J.H.; Lee, S.Y.; Kong, J.H.; Ahn, S.J.; Lee, S.H.; Park, J.H.; Oh, Y.T.; Kim, J.S.; Shin, J.M.; Fai, Y.; Jeong, G.T.; Kim, R.H.; Lim, H.S.; Park, I.S.; Jeong, H.S.; Kinam Kim, “Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology” VLSI Technology (2006).

43) Jeong, W.C.; Park, J.H.; Oh, J.H.; Jeong, G.T.; Jeong, H.S.; Kinam Kim, “ Highly scalable MRAM using field assisted current induced switching” VLSI Technology (2005).

42) Oh, J.H.; Park, J.H.; Lim, Y.S.; Lim, H.S.; Oh, Y.T.; Kim, J.S.; Shin, J.M.; Song, Y.J.; Ryoo, K.C.; Lim, D.W.; Park, S.S.; Kim, J.I.; Kim, J.H.; Yu, J.; Yeung, F.; Jeong, C.W.; Kong, J.H.; Kang, D.H.; Koh, G.H.; Jeong, G.T.; Jeong, H.S.; Kinam Kim; “ Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology”, IEDM (2006).

41) Ryoo, K.C.; Hwang, Y.N.; Lee, S.H.; Lee, S.; Ahn, S.J.; Song, Y.J.; Park, J.H.; Jeong, C.W.; Shin, J.M.; Jeong, W.C.; Koh, K.H.; Jeong, G.T.; Jeong, H.S.; Kim, K.N.; “Integration and cell characteristics for high density PRAM”, ESSDERC (2004).

40) Park, J.H.; Jeong, W.C.; Oh, J.H.; Jeong, C.W.; Shin, J.M.; Hwang, Y.N.; Ahn, S.J.; Lee, S.H.; Lee, S.Y.; Ryoo, K.C.; Jonghyun Park; Yang, F.; Koh, G.H.; Jeong, G.T.; Jeong, H.S.; Kinam Kim;“ Integration technologies for scalable high density MRAM”,  IEEE VLSI-TSA, (2005).

39) Song, Y.J.; Park, J.H.; Lee, S.Y.; Jae-Hyun Park; Hwang, Y.N.; Lee, S.H.; Ryoo, K.C.; Ahn, S.J.; Jeong, C.W.; Shin, J.M.; Jeong, W.C.; Koh, K.H.; Jeong, G.T.; Jeong, H.S.; Kim, K.N.; “Advanced ring type contact technology for high density phase change memory”, ESSDERC, (2005).

38) S.H. Lee, Y.N. Hwang, , S.Y. Lee, K.C. Ryoo,  S.J. Ahn,  H.C. Koo, C.W. Jeong, Y.T.Kim , G.H. Koh,  G.T.  Jeong, H.S. Jeong and Kinam Kim., “Full Integration and Cell Characteristics for 64Mb Non volatile PRAM” , VLSI Symposium, (2004).

37) Y.N. Hwang, J.S. Hong, S.H. Lee, S.J. Ahn, S.Y. Lee, G.T. Jeong, G.H. Koh , J.H. Oh, H.J. Kim, W.C. Jeong, S.Y.Lee, J.H.Park,K.C. Ryoo, H. Horii, Y.H. Ha, J.H. Yi, Y.T.Kim, K.H.Lee, S.H.Joo, S.O.Park, U.I.Joeng, H.S. Jeong and Kinam Kim., “Full Integration and Reliability Evaluation of Phase Change RAM based on 0.24um CMOS technology”, VLSI Symposium, (2004).

36) Woo Yeong Cho, Beak-hyung Cho, Byung-gil Choi, Hyung-rok Oh, Sang-beom Kang, Ki-sung Kim, Kyung-hee Kim, Du-eung Kim, Choong-keun Kwak, Hyun-geun Byun, Young-nam Hwang, Su-jin Ahn, Gi-tae Jeong, Hongsik Jeong and Kinam Kim, “A 0.18㎛ 3.0V 1T1R 64Mb Non-volatile Phase-transition Random Access Memory (PRAM) sensing scheme”, ISSCC, (2004).

35) Jeong, W.C.; Kim, H.J.; Park, J.H.; Oh,J.H.; Koh, G.H.; Jeong, G.T.; Jeong, H.S.; Lee, J.E.; Kim, H.J.; Park, S.O.; Jeong, U. I.; Kim, kinam, “Novel reference signal generation method for high density MRAM”,accepted, MMM & Intermag. Joint meeting, (2004).

34) Kim, Hyeong-Jun, Park, J.H., Jeong, W.C., Oh, J.H., Jeong, C.W., Koh, G.H; Jeong, G.T.; Jeong, H.S.; Kim, Kinam, “A Noble On-axis Cell Architecture for High Density 8F2 MRAM” accepted, MMM & Intermag. Joint meeting, (2004).

33) Y.N. Hwang, S.H. Lee, S.J. Ahn, S.Y. Lee, K.C. Ryoo, H.S. Hong, H.C. Koo, Y. Fai, J.H. Oh, H.J. Kim, W.C. Jeong, J.H. Park, H. Horii, Y.H. Ha, J.H. Yi, G.H. Koh, G.T. Jeong, H.S. Jeong and Kinam Kim “ Writing Current Reduction for High-density Phase-change RAM”, IEDM, (2003).

32) J. H. Park, W. C. Jeong, H. J. Kim, J. H. Oh, H. C. Koo, G. H. Koh, G. T. Jeong, H. S. Jeong, Y. J. Jeong, S. L. Cho, J. E. Lee, H. J. Kim and Kinam Kim., “An 8F2 MRAM Technology using Modified Metal Lines”, IEDM, (2003).

31) S.J.Ahn, K.W.Kwon, S.J.Baik, Y.N. Hwang, G.T. Jeong, H.S. Jeong and Kinam Kim., “Highly Scalable and CMOS-Compatible STTM Cell Technology”, IEDM, (2003).

30) Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim, “A 0.24㎛ 2.0V 1T1MTJ 16Kb Nonvolatile Magneto Resistance RAM with self reference sensing scheme”,  ISSCC, (2003).

29) Y.N. Hwang, J.S. Hong, S.H. Lee, S.J. Ahn, S.Y. Lee, G.T. Jeong, G.H. Koh , J.H. Oh, H.J. Kim, W.C. Jeong, S.Y.Lee, J.H.Park,K.C. Ryoo, H. Horii, Y.H. Ha, J.H. Yi, Y.T.Kim, K.H.Lee, S.H.Joo, S.O.Park, U.I.Joeng, H.S. Jeong and Kinam Kim., “Full Integration and Reliability Evaluation of Phase Change RAM based on 0.24um CMOS technology”,  VLSI Symposium, (2003).

28) Suyoun Lee, J.H. Park, H.J. Kim, K.H. Koh, G.T. Jeong, W.C. Jeong, J.H. Oh, I.H. Song, H.S. Jeong, and K.N. Kim, “Development of a 64kb MRAM and a study on the magnetization reversal in sub-um sized magnetic tunnel junctions ”,  ESSDERC, (2003).

27) J. Ahn, K.H.Koh, K.W.Kwon, S.J.Baek, Y.N. Hwang, G.T. Jung, H.S. Jung and Kinam Kim., “Examination and Improvement of reading disturb characteristics of a surround gate STTM memory cell”  IEEE Nano symposium, (2003).

26) Y.N. Hwang, J.S. Hong, S.H. Lee, S.J. Ahn, S.Y. Lee, G.T. Jeong, G.H. Koh , J.H. Oh, H.J. Kim, W.C. Jeong, S.Y.Lee, J.H.Park,K.C. Ryoo, H. Horii, Y.H. Ha, J.H. Yi, Y.T.Kim, K.H.Lee, S.H.Joo, S.O.Park, U.I.Joeng, H.S. Jeong and Kinam Kim,“Phase Change Calcogenide  Non Volatile RAM completed based on CMOS” VLSI-TSA, (2003).

25) G. H. Koh, H. J. Kim, W. C. Jeong, J.H. Oh, J.H. Park, S.Y. Lee, G.T. Jeong, I. J. Hwang,  T.W. Kim, J.E. Lee, H.J. Kim, S.O. Park, U.I. Jeong, H.S.Jeong, Kinam Kim  “Fabrication of High Performance 64Kb MRAM”, will be published J.of Manetism and Magnetic materials,  (2003).

24) Y.N. Hwang, J.S. Hong, S.H. Lee, S.J. Ahn, G.T. Jeong, K.C. Ryoo, G.H. Koh, H.J. Kim, W.C. Jeong, S.Y. Lee, J.H. Park ,H.S. Jeong and Kinam Kim, “Completely CMOS-compatible Phase-change Nonvolatile RAM Using NMOS Cell Transistors”, IEEE NVSM, (2003).

23) J.H.Park. B.J.Koo, H. Horii, Y.H. Ha, J.H. Yi, S.O. Park, Y.N. Hwang, S.H. Lee, S.J. Ahn, H.S. Jeong , U.I.Joeng, J.T. Moon, “Investigations of Nitrogen Doped Ge2Sb2Te5 Chalcogenide Thin Film For Phase Change Random  Access Memory”, MRS Fall Meeting, (2003).

22) Hongsik Jeong et. al., “Fully Integrated MRAM with Novel Reference Cell Scheme”, IEDM, (2002).

21) Su Jin Ahn, Jae Kyu Lee, Gee Tae Jung, Chang Hyun Cho, You Sang Hwang, Dong Won Shin,  Hong Sik Jeong, and Kinam Kim, “The Influence of IMD Bake Process on Buried Channel PMOS Hot Carrier Reliability of Advanced DRAM”, IRPS, (2002).

20) Hongsik Jeong et. al  “A New Sensing Scheme for 1T1MTJ MRAM Cells”, MMM (Magnetism and Magnetic Materials), (2002).

19) H.J.Kim, H.S. Jeong, G.T. Jeong, G.H. Koh, I.H.Song, W.C.Jeong, S.Y. Lee, J.H. Park and Kinam Kim, “Asymmetric Sub-micron MRAM Bits with High Electrical Stability”, MMM (Magnetism and Magnetic Materials), (2002).

18) B.J. Park, Y.S. Hwang , Y.N. Hwang, J.W. Lee, G.H. Lee, G.T. Jeong, H.S.Jeong, Y.J. Park, Kinam Kim., “A Novel Bit Line-SToFM(Spacerless Top Flat Mask)- Technology for 90nm DRAM generation and beyond”, VLSI Symposium, (2002).

17) Su Jin Ahn, G.T. Jeong, C.H. Cho, S.H.Shin, J.Y.Lee, J.G.Lee, H.S. Jeong, Kinam Kim, “Novel DRAM Cell Transistor with Asymmetric Source and Drain Junction Profiles”, VLSI Symposium, (2002).

16) Hongil Yoon, Jae Yoon Sim, Hyun Suk Lee, Kyu Nam Lim, Jae Young Lee, Nam Jong Kim, Keum Yong Kim, Sang Man Byun, Song Won Kim, Won Suk Yang, Changhyun Cho, Hong Sik Jeong, Jei Hwan Yoo, Dong Il Seo, Kinam Kim, Byung Il Ryu, and Chang Gyu Hwang  “A 4Gbit DDR SDRAM with Gain-Controlled Pre-Sensing and Reference Bitline Calibration Schemes in the Twisted Open Bitline Architecture”, ISSCC, (2001).

15) K.N. Kim, H.S. Jeong, W.S. Yang, Y.S. Hwang, C.H. Cho, S. Park, S.J. Ahn, Y.S. Chun, S.H. Shin, S.H. Song, J.Y. Lee, S.M. Jang, C.H. Lee, J.H. Jeong, M.H. Cho, J.K. Lee “A 4Gb SDRAM having 75nm channel width/length array transistor”, VLSI symposium, (2001).

14) J.G. Lee, G.H. Koh , K.H. Lee, C.H. Cho, G.T. Jeong, H.S. Jeong, T.Y. Chung, Kinam Kim, “A Novel DRAM Technology using Dual Spacer and mechanically Robust Capacitor for 0.12um DRAM and beyond”, ESSDERC, (2001).

13) H.S. Jeong et. al., “Highly Manufacturable 4Gb DRAM Using 0.11m DRAM Technology”, IEDM, (2000).

12) K.N. Kim, T.Y. Chung, H.S. Jeong, J.T. Moon, Y.W. Park, G.T. Jeong, K.H. Lee, G.H. Koh, D.W. Shin, Y.S. Hwang, D.W. Kwak, H.S. Uh, D.W. Ha, J.W. Lee, S.H. Shin, M.H. Lee, Y.S. Chun, J.S. Bae, J.K. Lee, B.J. Park, J.H. Oh, J.G. Lee and S.H. Lee “A 0.13㎛ DRAM Technology for Giga bit Density Stand-Alone and Embedded DRAMs”, VLSI symposium, (2000).

11) H.S. Uh, S.H. Song, B.J. Park, J.H. Oh, Y.S. Chun, D.H. Kwak, Y.S. Hwang, K.H. Lee, H.S. Jeong, T.Y. Chung, and Kinam Kim, “A Novel Cell-STP(Storage node Through Plate node) Cell-Technology for Multigigabit-scale DRAM and Logic-Embedded DRAM Generations”, IEDM, (1999).

10) W.S.Yang, Y.K. Kim, S.H.Shin, W.S. Lee, K.H. Lee, H.S. Jeong, J.H. Lee, T.Y. Jeong, H.S. Park, S.I. Lee, K.N. Kim, M.Y.Lee, C.G. Hwang, “ Cell- Technology for Novel Integration Technology with COM (Capacitor Over Metal) by Using S ADD(Self-Aligned Dual Damascene) Process for 0.15㎛ Stand-Alone Embedded DRAMs”, VLSI symposium, (1999).

09) Daewon Ha, Dongwon Shin, Gwan-Hyeob Koh, Jaegu Lee, Sanghyeon Lee, Yong-Seok Ahn, Hongsik Jeong, Taeyoung Chung, and Kinam Kim, “ A Cost Effective Integration Technology For High Density DRAM Merged with High Performance Logic”, ESSDERC, (1999).

08) Kinam Kim, H.S. Jeong, G.T. Jeong, C.H.Cho, Y.S. Yang, J.H. Shim, K.H.Lee, G.H.Koh, J.S. Bae, “A 1.5㎛ DRAM Technology Node for 4Gb DRAM”, VLSI symposium, (1998).

07) G.H.Koh, D.W. Ha, C.H.Cho, H.S. Jeong, G.T. Jeong Y.S. Yang, K.H.Lee, Kinam Kim“Development of CMP Processes for 4Gb DRAM”, CMP-MIC, (1998).

06) C.J.Kang, H.S. Jeong, K.S.Shin, J.T. Moon, M.Y.Lee, “The Influence of Substrate Hunction on Notch in the Etching of Storage Stack Polysilicon”, International Symposium on Plasma Process Induced Damage, (1998).

05) Y.S. Chun, B.J. Park, D.H.  Kwak, Y.S. Hwang, G.T. Jeong Hongsik Jeong, Taeyoung Chung, and Kinam Kim, “A New DRAM Cell Technology Using Merged Process with Storage Node and Memory Cell Contact for 4Gb DRAM and Beyond”, IEDM, (1998).

04) Y.J.Kim, H.S. Jeong, S.H. Lee, J.T. Moon, J.S. Choi, M.S. Han, “The study of etch rate degradation using Cl/He/HBr plasma in TCP type Poly Si Etche”, Symposium of Korean Vacuum Society, (1997).

03) Kim, Y.J.; Chu, C.W.; Lee, S.H.; Jeong, H.S.; Han, M.S.; Moon, J.T.; Koh, Y.B.; “Effects of surface charging on the notching in poly-silicon etch”, IEEE International Conference on Plasma Science, (1996).

02) H.S. Jeong et. al, “Profile Distortion by Charge Build-up in Capacitor Coupled Plasma type  Etcher”, Fall meeting of Japanese applied physics symposium, (1995).

01) Hongsik Jeong et. al., “Application of  Poly-Si Etch using Sidewall  Polymer Mask for Capacitance Enlargement”, 184th ECS Meetng, (1994).

PATENTS

 – International Patents Registered

1) Hongsik Jeong et. al.,  “BIT LANDING PAD and BOARDERLESS CONTACT…”, US Patent 6,350,649 B

2) Hongsik Jeong et. al.,“BIT LANDING PAD and BOARDERLESS CONTACT…”, US Patent 6,518,671 B1

3) Hongsik Jeong et. al., “SELF ALIGHN CONTACT FORMATION …”, British Patent 233179

4) Hongsik Jeong et. al., “METHOD FOR FORMING A SELF ALIGNED CONTACT IN A SEMICONDUCTOR DEVICE”, US Patent 6,177,320 B1

5) Hongsik Jeong et. al., “METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING  STORAGE NODES OF CAPACITOR”, US Patent 6,656,790 B2

6) Hongsik Jeong et. al.,“BIT LANDING PAD and BOARDERLESS CONTACT…”, US Patent 6,764,941 B2

7) Hongsik Jeong et. al.,“BIT LANDING PAD and BOARDERLESS CONTACT…”, US Patent 6,812,572 B2

8) Hongsik Jeong et. al., “METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING INCREASED EFFECTIVE CHANNEL LENGTH”, US Patent 6,815,300 B2

9) Hongsik Jeong et. al., “SEMICONDUCTOR DEVICE HAVING MULTILAYER INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD”, US patent 6,836,019 B2

10) Hongsik Jeong et. al., “SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME”, US patent 6,900,546 B2

11) Hongsik Jeong et. al., “METHODS OF OPERATING MAGNETIC RANDOM ACCESS MEMORY DEVICE USING SPIN INJECTION AND RELATED DEVICES”, US patent 7,164,598 B2

12) Hongsik Jeong et. al., “PHASE-CHANGEABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME”, US patent 7,295,463 B2

13) Hongsik Jeong et. al., “METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES HAVING AN ENCAPSULATED INSULATION LAYER ”, US patent 7,300,888 B2

14) Hongsik Jeong et. al., “SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME”,  US patent 7,462,523 B2

15) Hongsik Jeong et. al., “SEMICONDUCTOR DEVICE HAVING STRUCTURE AND MANUFACTURING METHOD THEREOF”, US patent 7,510,963 B2

16) Hongsik Jeong et. al., “MAGNETIC RANDOM ACCESS MEMORY CELLS HAVING SPLIT SUBDIGIT LINES HAVING CLADDING LAYERS THEREON AND METHODS OF FABRICATING THE SAME”, US patent 7,569,401 B2

17) Hongsik Jeong et. al.,“PHASE-CHANGEABLE MEMORY DEVICE THE METHOD OF MANUFACTURING THE SAME”, US patent 7,700,430 B2

18) Hongsik Jeong et. al., “MEMORY DEVICES WITH SELECTIVE PRE-WRITE VERIFICATION AND METHODS OF OPERATION THEREOF”, US patent 7,843,741 B2

19) Hongsik Jeong et. al., “MEMORY DEVICE EMPLOYING NVRAM AND FLASH MEMORY CELLS”, US patent, 7,916,538 B2

20) Hongsik Jeong et. al., “METHODS OF FORMING PHASE-CHANGE MEMORY UNITS, AND METHODS OF MANUFACTURING PHASE-CHANGE MEMORY DEVICES USING THE SAME”, US patent 8,043,924 B2

21) Hongsik Jeong et. al., “MULTI-BIT PHASE CHANGE MEMORY DEVICES”, US patent 8,320,170 B2

 – International Patents Registered

22) Hongsik Jeong et. al., “NEUROMORPHIC SYSTEM AND CONFIGURATION METHOD THEREOF”, US patent US 20150039547 A1

– Domestic

1) 12 Korean patents registered, 4 Korean Patents Application

PRESENTATIONS

  • Over 10 times invited speech in international conference
  • Over 10 times special lectures at KAIST, POSTECH, SNU.
  • Over 20 times other domestic and international presentations

NOTABLE PRESENTATIONS

  1. Hongsik Jeong, “Evolution of PRAM application with challenging technologies” keynote speech in NVMTS, U. of Minnesota, (2013).
  2. Hongsik Jeong, “Application Driven PRAM Technologies ” keynote speech in NVMTS, DSI, Singapore, (2012).
  3. Hongsik Jeong, “Recent Progress and Applications of PRAM” invited speech in CIMTEC, Italy, (2012).
  4. Hongsik Jeong, “Recent Progrss and Prospect of Phase Change Memory” invited speech in MRS, USA, (2011).
  5. Hongsik Jeong and Kinam Kim, “Prospect of new emerging memories”, invited speech  of  MRS, (2004)
  6. Hongsik Jeong and Kinam Kim, “Prospect of new emerging memories”, invited speech of  SSDM, (2003)
  7. Hongsik Jeong,“The Emerging memories: their characteristics and applications” Proceedings of 64th SSICT, (2003).
  8. Kinam Kim, H.S. Jeong, G.T. Jeong, C.H.Cho, Y.S. Yang, J.H. Shim, K.H.Lee, G.H.Koh, J.S. Bae, “A 1.5㎛ DRAM Technology Node for 4Gb DRAM” Highlight Session of VLSI symposium (1998).

BOOK

  1.  NONVOLATILE MEMORIES-Materials, Devices and Applications Edited by Tseung-Yuen Tseng and Simon M. Sze, American Scientific Publishers. 2012.
    – Vol.2 Chap. Phase Change Memory, Dae-Hwan Kang, Ki-Bum Kim, Byung-Ki Cheong, and Hong-Sik Jeong